KTD1824 datasheet(2/3 Pages) KEC

No de pièce	KTD1824

Description	EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)

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Fabricant	KEC [KEC(Korea Electronics)]

Site Internet	http://www.keccorp.com

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2 / 3 page

2001. 11. 29

2/3

KTD1824

Revision No : 1

COLLECTOR-EMITTER VOLTAGE V

(V)

0

CE

0

I

- V

C

CE

24

68

10

20

40

60

80

100

120

V

- I

CE(sat)

C

COLLECTOR CURRENT I

(mA)

C

I =10

µA

20

µA

30

µA

40

µA

50

µA

60

µA

70

µA

80µA

90µA

100µA

B

BASE-EMITTER VOLTAGE V

(V)

0

BE

0

I

- V

C

BE

0.4

0.8

1.2

0.2

0.6

1.0

20

40

60

80

100

h

- I

FE

C

0.01

1

0.03

0.05

0.1

0.3

0.5

Ta=25 C

Ta=-25

C

Ta=75 C

Ta=25 C

Ta=-25 C

Ta=25 C

0.1

0.3

1

3

10

30

100

C

COLLECTOR CURRENT I

(mA)

0.1

0.3

1

3

10

30

100

E

EMITTER CURRENT I

(mA)

-0.1

-0.3

0

-1

-3

-10

-30

-100

50

100

150

200

250

0

300

600

900

1200

COLLECTOR-BASE VOLTAGE V

(V)

CB

C

- V

ob

CB

f

- I

TE

f=1MHz

0

10

30

3

1

100

2

1

3

4

5

6

7

8

I =0

E

V

=10V

CE

V

=10V

CE

V

=10V

CB

I /I =10

C B

Numéro de pièce similaire - KTD1824

Fabricant	No de pièce	Fiches technique	Description
KEC(Korea Electronics)	KTD1824	21Kb / 1P	USM PACKAGE
	KTD1824E	71Kb / 3P	EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)
	KTD1824	21Kb / 1P	USM PACKAGE

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Description similaire - KTD1824

Fabricant	No de pièce	Fiches technique	Description
KEC(Korea Electronics)	KTD1824E	71Kb / 3P	EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)
Panasonic Semiconductor	XN01558	78Kb / 3P	Silicon NPN epitaxial planar type For low-frequency amplification
	DSC7003	315Kb / 3P	Silicon NPN epitaxial planar type For low frequency output amplification
	2SC2497	70Kb / 4P	Silicon NPN epitaxial planar type(For low-frequency power amplification) 2001 MAR
	2SD2621	88Kb / 3P	Silicon NPN epitaxial planar type For low-frequency driver amplification
	2SD2051	57Kb / 2P	Silicon NPN epitaxial planar type Darlington(For low-frequency amplification)
NEC	2SC5433	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC	2SC5434	61Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5432	314Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION February 2002
NEC	2SC3663	110Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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KTD1824 Fiches technique(PDF) 2 Page - KEC(Korea Electronics)

KTD1824 Fiches technique(HTML) 2 Page - KEC(Korea Electronics)

Numéro de pièce similaire - KTD1824

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