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SS10P4 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SS10P4 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 6 page SS10P3, SS10P4 www.vishay.com Vishay General Semiconductor Revision: 23-Jan-13 1 Document Number: 88983 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Barrier Rectifiers TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 30 V, 40 V IFSM 280 A EAS 20 mJ VF at IF = 10 A 0.41 V TJ max. 150 °C TO-277A (SMPC) Anode 1 Anode 2 Cathode K K 2 1 eSMP® Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10P3 SS10P4 UNIT Device marking code S103 S104 Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 280 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
Numéro de pièce similaire - SS10P4_15 |
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Description similaire - SS10P4_15 |
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