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KTB985 Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

No de pièce KTB985
Description  EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY DRIVERS LAMP DRIVER, ELECTRICAL EQUIPMENT)
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTB985 Fiches technique(HTML) 1 Page - KEC(Korea Electronics)

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1999. 11. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB985
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1347.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
Φ1.50
0.10 MAX
DEPTH:0.2
123
B
C
Q
K
FF
M
M
N
N
H
L
D
C
N
P
HH
E
H
S
12.50 0.50
R
1.00
S
1.15 MAX
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE (1) Classification A:100 200, B:140 280, C:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Vollector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-3
A
Collector Current (Pulse)
ICP
-6
A
Collector Power Dissipation
PC
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT.
Collector Cut-off Current
ICBO
VCB=-40V, IE=0
-
-
-1
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
-
-
-1
DC Current Gain
hFE (1) (Note) VCE=-2V, IC=-100
100
-
400
hFE (2)
VCE=-2V, IC=-3A
35
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-2A, IB=-100
-
-0.35
-0.7
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-2A, IB=-100
-
-0.94
-1.2
V
Transition Frequency
fT
VCE=-10V, IC=-50
-
150
-
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1
-
39
-
Switching
Time
Turn-on Time
ton
-
70
-
nS
Storage Time
tstg
-
450
-
Fall Time
tf
-
35
-
IB2
470
25
5V
-25V
-10I 1=10I =I =1A
BB2
C
100
50
VR
IB1
PW=20
µs
DC 1%
R8
INPUT
<
=


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