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KTA1270 Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

No de pièce KTA1270
Description  EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTA1270 Fiches technique(HTML) 1 Page - KEC(Korea Electronics)

  KTA1270 Datasheet HTML 1Page - KEC(Korea Electronics) KTA1270 Datasheet HTML 2Page - KEC(Korea Electronics)  
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2012. 6. 8
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1270
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent h
FE Linearity
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.
・Complementary to KTC3202.
MAXIMUM RATING (Ta=25
℃)
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
Note : hFE(1) Classification
0:70
~140,
Y:120
~240
hFE(2) Classification
0:25Min.,
Y:40Min.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-35V, IE=0
-
-
-0.1
μA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
μA
DC Current Gain
hFE(1) (Note)
VCE=-1V, IC=-100mA
70
-
240
hFE(2) (Note)
VCE=-6V, IC=-400mA
25
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA
-
-0.1
-0.25
V
Base-Emitter Voltage
VBE
VCE=-1V, IC=-100mA
-
-0.8
-1.0
V
Transition Frequency
fT
VCE=-6V, IC=-20mA
-
200
-
MHz
Collector Output Capacitance
Cob
VCB=-6V, IE=0, f=1MHz
-
13
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-35
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Base Current
IB
-100
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
~150


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