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KRA730U Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

No de pièce KRA730U
Description  EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KRA730U Fiches technique(HTML) 1 Page - KEC(Korea Electronics)

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SEMICONDUCTOR
TECHNICAL DATA
KRA730U~KRA734U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM
MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
T
6
4
1.3 0.1
A1
5
+_
+_
+_
+_
+_
1. Q EMITTER
4. Q COLLECTOR
3. Q BASE
5. Q BASE
6. Q COLLECTOR
1
1
2. Q EMITTER
2
1
2
2
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25
)
MARK SPEC
R1
C
E
B
Type Name
12
3
6
54
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector Power Dissipation
PC *
200
mW
Junction Temperature
Tj
150
Storage TemperatureRange
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-
-
-100
nA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-100
nA
DC Current Gain
hFE
VCE=-5V, IC=-1mA
120
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-10mA, IB=-0.5mA
-
-0.1
-0.3
V
Transition Frequency
fT *
VCE=-10V, IC=-5mA
-
250
-
MHz
Input Resistor
KRA730U
R1
-
4.7
-
k
KRA731U
-
10
-
KRA732U
-
100
-
KRA733U
-
22
-
KRA734U
-
47
-
TYPE
KRA730U
KRA731U
KRA732U
KRA733U
KRA734U
MARK
JK
JM
JN
JO
JP
EQUIVALENT CIRCUIT (TOP VIEW)
1
Q1
23
65
4
Q2
Marking
* Total Rating.
Note : * Characteristic of transistor only.
2002. 7. 9


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