2SA1464_15 datasheet(1/1 Pages) WINNERJOIN

No de pièce	2SA1464

Description	PNP TRANSISTOR

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Fabricant	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

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WEJ

ELECTRONIC

CO.,LTD

2. 80¡ À0. 05

1. 60¡ À0. 05

2SA1464 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM :

0.2

W (Tamb=25

℃)

Collector current

ICM :

-0.5

A

Collector-base voltage

V(BR)CBO : -60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-100

µA, I

E=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= -1mA, IB=0

-40

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100

µA, I

C=0

-5

V

Collector cut-off current

ICBO

VCB=- 40 V , IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -4V ,

IC=0

-0.1

µA

DC current gain

hFE(1)

VCE=- 2V, IC= -150mA

75

140

300

DC current gain

hFE(2)

VCE=- 2V, IC= -500mA

20

50

Collector-emitter saturation voltage

VCE(sat)

IC=-500 mA, IB= -50mA

-0.45

-0.75

V

Base-emitter voltage

VBE(on)

IC=-500mA, VCE=-50V

-1.0

-1.3

V

Transition frequency

fT

VCE=-10V, IC= -20mA

150

400

MHz

Ouput Capacitance

Cob

VCB=-10V, IE=-20mA

5.0

8.0

pF

Turn-on Time

ton

35

ns

Storage Time

tstg

225

ns

Turn-on Time

Toff

VCC=-30V

IC=150mA

IB1=-IB2=15mA

255

ns

CLASSIFICATION OF hFE(1)

Marking

Y12

Y13

Y14

Range

75-150

100-200

150-300

SOT-23-3L

1. EMITTER

2. BASE

3. COLLECTOR

2SA1464

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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