2SK3408_15 datasheet(5/9 Pages) RENESAS

No de pièce	2SK3408

Description	MOS FIELD EFFECT TRANSISTOR

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Data Sheet D15016EJ4V0DS

3

2SK3408

TYPICAL CHARACTERISTICS (TA = 25°C)

30

150

60

90

20

60

80

40

0

100

120

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TA - Ambient Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V

10

1

0.1

0.01

10

100

1

0.1

5 s

100

ms

10

ms

PW

=

1

ms

R

DS(on)

Limited

(at

V

GS

=

10

V)

ID(pulse)

ID(DC)

Single pulse

Mounted on 250 mm2 x 35 m copper pad

connected to drain electrode in

2500 mm2 x 1.6 mm FR-4 board

µ

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

0

1

2

4

3

0.2

0.4

0.6

0.8

1

VGS = 10 V

4.5 V

4.0 V

0.01

0.001

0.0001

0.00001

1

0

2

34

10

1

0.1

VGS - Gate to Sorce Voltage - V

TA = 125˚C

75˚C

25˚C

−25˚C

FORWARD TRANSFER CHARACTERISTICS

VDS = 10 V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VDS = 10 V

ID = 1 mA

−50

50

100

0

150

2.5

2

1.5

1

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

ID - Drain Current - A

1

10

0.1

1

10

0.1

0.01

TA =

−25˚C

25˚C

75˚C

125˚C

VDS = 10 V

Numéro de pièce similaire - 2SK3408_15

Fabricant	No de pièce	Fiches technique	Description
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Renesas Technology Corp	2SK3408	198Kb / 9P	Old Company Name in Catalogs and Other Documents

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