Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

2SC4550 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SC4550
Description  SILICON POWER TRANSISTOR
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4550 Fiches technique(HTML) 4 Page - Renesas Technology Corp

  2SC4550_15 Datasheet HTML 1Page - Renesas Technology Corp 2SC4550_15 Datasheet HTML 2Page - Renesas Technology Corp 2SC4550_15 Datasheet HTML 3Page - Renesas Technology Corp 2SC4550_15 Datasheet HTML 4Page - Renesas Technology Corp 2SC4550_15 Datasheet HTML 5Page - Renesas Technology Corp 2SC4550_15 Datasheet HTML 6Page - Renesas Technology Corp 2SC4550_15 Datasheet HTML 7Page - Renesas Technology Corp 2SC4550_15 Datasheet HTML 8Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
Data Sheet D15596EJ2V0DS
2
2SC4550
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 4.0 A, IB = 0.4 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC = 4.0 A, IB1 =
−IB2 = 0.4 A,
VBE(OFF) =
−1.5 V, L = 180
µH, clamped
60
V
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
10
µA
Collector cutoff current
ICER
VCE = 60 V, RBE = 50
Ω, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 60 V, VBE(OFF) =
−1.5 V
10
µA
Collector cutoff current
ICEX2
VCE = 60 V, VBE(OFF) =
−1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
µA
DC current gain
hFE1*VCE = 2.0 V, IC = 0.7 A
100
DC current gain
hFE2*VCE = 2.0 V, IC = 1.5 A
100
200
400
DC current gain
hFE3*VCE = 2.0 V, IC = 4.0 A
60
Collector saturation voltage
VCE(sat)1*IC = 4.0 A, IB = 0.2 A
0.3
V
Collector saturation voltage
VCE(sat)2*IC = 6.0 A, IB = 0.3 A
0.5
V
Base saturation voltage
VBE(sat)1*IC = 4.0 A, IB = 0.2 A
1.2
V
Base saturation voltage
VBE(sat)2*IC = 6.0 A, IB = 0.3 A
1.5
V
Collector capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
100
pF
Gain bandwidth product
fT
VCE = 10 V, IC = 1.0 A
150
MHz
Turn-on time
ton
0.1
0.3
µs
Storage time
tstg
1.0
1.5
µs
Fall time
tf
IC = 4.0 A, RL = 12.5
Ω,
IB1 =
−IB2 = 0.2 A, VCC ≅ 50 V
Refer to the test circuit.
0.1
0.3
µs
* Pulse test PW
≤ 350
µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform


Numéro de pièce similaire - 2SC4550_15

FabricantNo de pièceFiches techniqueDescription
logo
NEC
2SC4550 NEC-2SC4550 Datasheet
135Kb / 6P
   NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
logo
Savantic, Inc.
2SC4550 SAVANTIC-2SC4550 Datasheet
260Kb / 4P
   Silicon NPN Power Transistors
logo
Renesas Technology Corp
2SC4550 RENESAS-2SC4550 Datasheet
259Kb / 8P
   SILICON POWER TRANSISTOR
logo
Inchange Semiconductor ...
2SC4550 ISC-2SC4550 Datasheet
258Kb / 2P
   isc Silicon NPN Power Transistor
logo
Comset Semiconductor
2SC4550 COMSET-2SC4550 Datasheet
96Kb / 3P
   SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
More results

Description similaire - 2SC4550_15

FabricantNo de pièceFiches techniqueDescription
logo
Comset Semiconductor
2N3441 COMSET-2N3441 Datasheet
98Kb / 2P
   SILICON POWER TRANSISTOR
logo
Renesas Technology Corp
2SB1669 RENESAS-2SB1669_15 Datasheet
262Kb / 8P
   SILICON POWER TRANSISTOR
2SC2334 RENESAS-2SC2334_15 Datasheet
239Kb / 8P
   SILICON POWER TRANSISTOR
2SD2162 RENESAS-2SD2162_15 Datasheet
235Kb / 8P
   SILICON POWER TRANSISTOR
logo
NEC
2SC2331 NEC-2SC2331 Datasheet
265Kb / 6P
   Silicon Power Transistor
2SC4342 NEC-2SC4342 Datasheet
56Kb / 8P
   Silicon Power Transistor
logo
Renesas Technology Corp
2SD1164-Z RENESAS-2SD1164-Z Datasheet
1Mb / 6P
   SILICON POWER TRANSISTOR
2SA1385-Z RENESAS-2SA1385-Z Datasheet
796Kb / 6P
   SILICON POWER TRANSISTOR
2SA1744 RENESAS-2SA1744 Datasheet
269Kb / 8P
   SILICON POWER TRANSISTOR
2SB1431 RENESAS-2SB1431 Datasheet
257Kb / 8P
   SILICON POWER TRANSISTOR
2SC3632-Z RENESAS-2SC3632-Z Datasheet
895Kb / 7P
   SILICON POWER TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com