2SK2788_15 datasheet(1/7 Pages) RENESAS

No de pièce	2SK2788

Description	Silicon N Channel MOS FET High Speed Power Switching

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Fabricant	RENESAS [Renesas Technology Corp]

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R07DS0511EJ0300 Rev.3.00

Page 1 of 6

Jul 27, 2011

Preliminary Datasheet

2SK2788

Silicon N Channel MOS FET

High Speed Power Switching

Features

 Low on-resistance

RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)

 Low drive current

 High speed switching

 4 V gate drive devices.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK)

1. Gate

2. Drain

3. Source

4. Drain

4

3

2

1

D

G

S

Note:

Marking is “VY”

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

V

Gate to source voltage

VGSS

20

V

Drain current

ID

2

A

Drain peak current

ID(pulse)*

1

4

A

Body to drain diode reverse drain current

IDR

2

A

Channel dissipation

Pch*

2

1

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

 100 s, duty cycle  10 %

2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)

R07DS0511EJ0300

(Previous: REJ03G1033-0200)

Rev.3.00

Jul 27, 2011

Numéro de pièce similaire - 2SK2788_15

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