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2SK2788 Fiches technique(PDF) 1 Page - Renesas Technology Corp |
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2SK2788 Fiches technique(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0511EJ0300 Rev.3.00 Page 1 of 6 Jul 27, 2011 Preliminary Datasheet 2SK2788 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1. Gate 2. Drain 3. Source 4. Drain 4 3 2 1 D G S Note: Marking is “VY” Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 2 A Drain peak current ID(pulse)* 1 4 A Body to drain diode reverse drain current IDR 2 A Channel dissipation Pch* 2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 100 s, duty cycle 10 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) R07DS0511EJ0300 (Previous: REJ03G1033-0200) Rev.3.00 Jul 27, 2011 |
Numéro de pièce similaire - 2SK2788_15 |
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Description similaire - 2SK2788_15 |
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