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IRFP250N Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFP250N
Description  Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFP250N Fiches technique(HTML) 2 Page - International Rectifier

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IRFP250N
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 18A, VGS = 0V
„
trr
Reverse Recovery Time
–––
186
279
ns
TJ = 25°C, IF = 18A
Qrr
Reverse Recovery Charge
–––
1.3
2.0
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
30
120
A
‚ Starting TJ = 25°C, L = 1.9mH
RG = 25Ω, IAS = 18A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Notes:
ƒ I
SD ≤ 18A, di/dt ≤ 374A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.26
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.075
VGS = 10V, ID = 18A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
17
–––
–––
S
VDS = 50V, ID = 18A
„
–––
–––
25
µA
VDS = 200V, VGS = 0V
–––
–––
250
VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
123
ID = 18A
Qgs
Gate-to-Source Charge
–––
–––
21
nC
VDS = 160V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
57
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 100V
tr
Rise Time
–––
43
–––
ID = 18A
td(off)
Turn-Off Delay Time
–––
41
–––
RG = 3.9Ω
tf
Fall Time
–––
33
–––
RD = 5.5Ω, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
2159 –––
VGS = 0V
Coss
Output Capacitance
–––
315
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
83
–––
ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current


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