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IRFP250N Fiches technique(PDF) 4 Page - International Rectifier

No de pièce IRFP250N
Description  Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFP250N Fiches technique(HTML) 4 Page - International Rectifier

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IRFP250N
4
www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
0
4
8
12
16
Q , Total Gate Charge (nC)
G
I =
D
18A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°


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