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IRFB42N20D Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRFB42N20D
Description  Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A)
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFB42N20D Fiches technique(HTML) 1 Page - International Rectifier

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www.irf.com
1
5/7/01
IRFB42N20D
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
200V
0.055
Ω
44A
PD- 94208
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
44
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
31
A
IDM
Pulsed Drain Current

180
PD @TA = 25°C
Power Dissipation
2.4
W
PD @TC = 25°C
Power Dissipation
330
Linear Derating Factor
2.2
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
2.5
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance


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