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IRF9Z24NS Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF9Z24NS
Description  Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF9Z24NS Fiches technique(HTML) 2 Page - International Rectifier

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IRF9Z24NS/L
2
www.irf.com
‚ Starting T
J = 25°C, L = 3.7mH
RG = 25Ω, IAS = -7.2A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF9Z24N data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) •
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.6
V
TJ = 25°C, IS = -7.2A, VGS = 0V
„
trr
Reverse Recovery Time
–––
47
71
ns
TJ = 25°C, IF = -7.2A
Qrr
Reverse RecoveryCharge
–––
84
130
nC
di/dt = -100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
-0.05 –––
V/°C
Reference to 25°C, ID = -1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.175
VGS = -10V, ID = -7.2A
„
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
2.5
–––
–––
S
VDS = -25V, ID = -7.2A
–––
–––
-25
µA
VDS = -55V, VGS = 0V
–––
–––
-250
VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
19
ID = -7.2A
Qgs
Gate-to-Source Charge
–––
–––
5.1
nC
VDS = -44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
10
VGS = -10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
13
–––
VDD = -28V
tr
Rise Time
–––
55
–––
ID = -7.2A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 24Ω
tf
Fall Time
–––
37
–––
RD = 3.7Ω, See Fig. 10
„…
Between lead,
and center of die contact
Ciss
Input Capacitance
–––
350
–––
VGS = 0V
Coss
Output Capacitance
–––
170
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
92
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance
-12
-48


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