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IRF9410 Fiches technique(PDF) 1 Page - International Rectifier |
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IRF9410 Fiches technique(HTML) 1 Page - International Rectifier |
1 / 7 page PRELIMINARY HEXFET® Power MOSFET PD - 9.1562A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 9/15/97 SO-8 VDSS = 30V RDS(on) = 0.030Ω l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated IRF9410 Description Top V iew 8 1 2 3 4 5 6 7 D D D D G S A S S A Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 Symbol Maximum Units Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TA = 25°C 7.0 TA = 70°C 5.8 Pulsed Drain Current IDM 37 Continuous Source Current (Diode Conduction) IS 2.8 TA = 25°C 2.5 TA = 70°C 1.6 Single Pulse Avalanche Energy EAS 70 mJ Avalanche Current IAR 4.2 A Repetitive Avalanche Energy EAR 0.25 mJ Peak Diode Recovery dv/dt dv/dt 5.0 V/ ns Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 50 °C/W Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Continuous Drain Current Maximum Power Dissipation A ID PD V W |
Numéro de pièce similaire - IRF9410 |
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Description similaire - IRF9410 |
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