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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF830AS Fiches technique(PDF) 2 Page - International Rectifier |
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IRF830AS Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF830AS/L 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 2.8 ––– ––– S VDS = 50V, ID = 3.0A Qg Total Gate Charge ––– ––– 24 ID = 5.0A Qgs Gate-to-Source Charge ––– ––– 6.3 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 10 ––– VDD = 250V tr Rise Time ––– 21 ––– ID = 5.0A td(off) Turn-Off Delay Time ––– 21 ––– RG = 14Ω tf Fall Time ––– 15 ––– RD = 49Ω,See Fig. 10 Ciss Input Capacitance ––– 620 ––– VGS = 0V Coss Output Capacitance ––– 93 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 4.3 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 886 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 27 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 39 ––– VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 230 mJ IAR Avalanche Current ––– 5.0 A EAR Repetitive Avalanche Energy ––– 7.4 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 5.0A, VGS = 0V trr Reverse Recovery Time ––– 430 650 ns TJ = 25°C, IF = 5.0A Qrr Reverse RecoveryCharge ––– 2.0 3.0 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 5.0 20 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 1.4 Ω VGS = 10V, ID = 3.0A VGS(th) Gate Threshold Voltage 2.0 ––– 4.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.7 °C/W RθJA Junction-to-Ambient ( PCB Mounted, steady-state)* ––– 40 Thermal Resistance |
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