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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7458 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7458 Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7458 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.82 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ––– 0.68 ––– TJ = 125°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 11A, VR= 20V Qrr Reverse Recovery Charge ––– 87 130 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 52 78 ns TJ = 125°C, IF = 11A, VR=20V Qrr Reverse Recovery Charge ––– 93 140 nC di/dt = 100A/µs Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– 6.3 8.0 VGS = 16V, ID = 14A ––– 7.0 9.0 VGS = 10V, ID = 11A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 24V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -24V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω S D G Diode Characteristics 2.3 110 A VSD Diode Forward Voltage Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 280 mJ IAR Avalanche Current ––– 11 A Avalanche Characteristics Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 26 ––– ––– S VDS = 15V, ID = 11A Qg Total Gate Charge ––– 39 59 ID = 11A Qgs Gate-to-Source Charge ––– 11 17 nC VDS = 15V Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 13 VGS = 10V Qoss Output Gate Charge ––– 29 44 VGS = 0V, VDS = 16V td(on) Turn-On Delay Time ––– 10 ––– VDD = 15V tr Rise Time ––– 4.6 ––– ID = 11A td(off) Turn-Off Delay Time ––– 22 ––– RG = 1.8Ω tf Fall Time ––– 5.0 ––– VGS = 10V Ciss Input Capacitance ––– 2410 ––– VGS = 0V Coss Output Capacitance ––– 1100 ––– VDS = 15V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz |
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Description similaire - IRF7458 |
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