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IRF7451 Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7451
Description  Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A)
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7451 Fiches technique(HTML) 1 Page - International Rectifier

  IRF7451 Datasheet HTML 1Page - International Rectifier IRF7451 Datasheet HTML 2Page - International Rectifier IRF7451 Datasheet HTML 3Page - International Rectifier IRF7451 Datasheet HTML 4Page - International Rectifier IRF7451 Datasheet HTML 5Page - International Rectifier IRF7451 Datasheet HTML 6Page - International Rectifier IRF7451 Datasheet HTML 7Page - International Rectifier IRF7451 Datasheet HTML 8Page - International Rectifier  
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 1 / 8 page
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www.irf.com
1
01/31/01
IRF7451
SMPS MOSFET
HEXFET® Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
150V
0.09
Ω
Ω
Ω
Ω
Ω
3.6A
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
3.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
2.9
A
IDM
Pulsed Drain Current

29
PD @TA = 25°C
Power Dissipation
†
2.5
W
Linear Derating Factor
0.02
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
7.9
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
 through † are on page 8
SO-8
To p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Symbol
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
RθJA
Junction-to-Ambient
†
–––
50
°C/W
Thermal Resistance
PD- 93898A


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