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2SK3386 Fiches technique(PDF) 9 Page - Renesas Technology Corp |
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2SK3386 Fiches technique(HTML) 9 Page - Renesas Technology Corp |
9 / 10 page Data Sheet D14471EJ4V0DS 7 2SK3386 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 13 6.5±0.2 5.0±0.2 4 2.3 2.3 0.5±0.1 2.3±0.2 1.1±0.2 0.5-0.1 +0.2 0.5-0.1 +0.2 2) TO-252 (MP-3Z) 12 3 4 6.5 ±0.2 4.4 ±0.2 5.0 ±0.2 0.5 ±0.1 0.5 ±0.1 2.3 ±0.2 0.5 ±0.1 Note Note 0.15 ±0.15 2.3 ±0.3 2.3 ±0.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Note The depth of notch at the top of the fin is from 0 to 0.2 mm. <R> |
Numéro de pièce similaire - 2SK3386_15 |
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Description similaire - 2SK3386_15 |
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