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2SJ600 Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SJ600 Fiches technique(HTML) 4 Page - Renesas Technology Corp |
4 / 10 page Data Sheet D14645EJ4V0DS 2 2SJ600 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 μA Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V Forward Transfer Admittance Note | yfs | VDS = –10 V, ID = –13 A 10 20 S Drain to Source On-state Resistance Note RDS(on)1 VGS = –10 V, ID = –13 A 41 50 m Ω RDS(on)2 VGS = –4.0 V, ID = –13 A 55 79 m Ω Input Capacitance Ciss VDS = –10 V, 1900 pF Output Capacitance Coss VGS = 0 V, 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 140 pF Turn-on Delay Time td(on) ID = –13 A, 9 ns Rise Time tr VGS = –10 V, 10 ns Turn-off Delay Time td(off) VDD = –30 V, 67 ns Fall Time tf RG = 0 Ω 19 ns Total Gate Charge QG ID = –25 A, 38 nC Gate to Source Charge QGS VDD= –48 V, 7 nC Gate to Drain Charge QGD VGS = –10 V 10 nC Body Diode Forward Voltage Note VF(S-D) IF = 25 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 25 A, VGS = 0 V 49 ns Reverse Recovery Charge Qrr di/dt = 100 A/ μs 100 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω L VDD VGS = −20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG 0 VGS(−) D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS(−) 10% 90% VGS 10% 0 VDS(−) 90% 90% td(on) tr td(off) tf 10% τ VDS 0 ton toff PG. PG. 50 Ω D.U.T. RL VDD IG = −2 mA − |
Numéro de pièce similaire - 2SJ600_15 |
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Description similaire - 2SJ600_15 |
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