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2SJ600 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SJ600
Description  SWITCHING P-CHANNEL POWER MOS FET
Download  10 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ600 Fiches technique(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D14645EJ4V0DS
2
2SJ600
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V
–10
μA
Gate Leakage Current
IGSS
VGS =
m20 V, VDS = 0 V
m10
μA
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = –10 V, ID = –13 A
10
20
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = –10 V, ID = –13 A
41
50
m
Ω
RDS(on)2
VGS = –4.0 V, ID = –13 A
55
79
m
Ω
Input Capacitance
Ciss
VDS = –10 V,
1900
pF
Output Capacitance
Coss
VGS = 0 V,
350
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
140
pF
Turn-on Delay Time
td(on)
ID = –13 A,
9
ns
Rise Time
tr
VGS = –10 V,
10
ns
Turn-off Delay Time
td(off)
VDD = –30 V,
67
ns
Fall Time
tf
RG = 0
Ω
19
ns
Total Gate Charge
QG
ID = –25 A,
38
nC
Gate to Source Charge
QGS
VDD= –48 V,
7
nC
Gate to Drain Charge
QGD
VGS = –10 V
10
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 25 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 25 A, VGS = 0 V
49
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
100
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
L
VDD
VGS =
−20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS(−)
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS(−)
10%
90%
VGS
10%
0
VDS(−)
90%
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
PG.
50
Ω
D.U.T.
RL
VDD
IG =
−2 mA


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