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2SA1649 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SA1649
Description  PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA1649 Fiches technique(HTML) 4 Page - Renesas Technology Corp

  2SA1649_15 Datasheet HTML 1Page - Renesas Technology Corp 2SA1649_15 Datasheet HTML 2Page - Renesas Technology Corp 2SA1649_15 Datasheet HTML 3Page - Renesas Technology Corp 2SA1649_15 Datasheet HTML 4Page - Renesas Technology Corp 2SA1649_15 Datasheet HTML 5Page - Renesas Technology Corp 2SA1649_15 Datasheet HTML 6Page - Renesas Technology Corp 2SA1649_15 Datasheet HTML 7Page - Renesas Technology Corp  
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Data Sheet D15588EJ3V0DS
2
2SA1649,1649-Z
ELECTRICAL CHARACTERISTICS (Ta = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
−4.0 A, IB = −0.4 A, L = 1 mH
−30
V
Collector to emitter voltage
VCEX(SUS)
IC =
−4.0 A, IB2 = −IB1 = −0.4 A,
VBE(OFF) = 1.5 V, L = 180
μH, clamped
−40
V
Collector cutoff current
ICBO
VCE =
−30 V, IE = 0
−10
μA
Collector cutoff current
ICER
VCE =
−30 V, RBE = 50 Ω, Ta = 125°C
−1.0
mA
Collector cutoff current
ICEX1
VCE =
−30 V, VBE(OFF) = 1.5 V
−10
μA
Collector cutoff current
ICEX2
VCE =
−30 V, VBE(OFF) = 1.5 V,
Ta = 125
°C
−1.0
mA
Emitter cutoff current
IEBO
VEB =
−5.0 V, IC = 0
−10
μA
DC current gain
hFE1
Note
VCE =
−2.0 V, IC = −0.5 A
100
DC current gain
hFE2
Note
VCE =
−2.0 V, IC = −2.0 A
100
200
400
DC current gain
hFE3
Note
VCE =
−2.0 V, IC = −4.0 A
60
Collector saturation voltage
VCE(sat)1
Note
IC =
−3.0 A, IB = −0.2 A
−0.3
V
Collector saturation voltage
VCE(sat)2
Note
IC =
−4.0 A, IB = −0.3 A
−0.5
V
Base saturation voltage
VBE(sat)1
Note
IC =
−3.0 A, IB = −0.2 A
−1.2
V
Base saturation voltage
VBE(sat)2
Note
IC =
−4.0 A, IB = −0.3 A
−1.5
V
Collector capacitance
Cob
VCB =
−10 V, IE = 0, f = 1.0 MHz
250
pF
Gain bandwidth product
fT
VCE =
−10 V, IC = −0.5 A
120
MHz
Turn-on time
ton
0.3
μs
Storage time
tstg
1.5
μs
Fall time
tf
IC =
−4.0 A, RL = 5 Ω,
IB1 =
−IB2 = −0.15 A, VCC ≅ −20 V
Refer to the test circuit.
0.3
μs
Note Pulse test PW
≤ 350
μs, duty cycle ≤ 2%/pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VIN
PW
PW
≅ 50
Duty Cycle
≤ 2%
VBB
≅ 5 V
VCC
10%
90%
RL = 17
Ω
IB1
IC
IB2
IB1
IC
ton
tstg tf
TUT
IB2
s
μ
Base current
waveform
Collector current
waveform


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