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IRF1404L Datasheet(Fiches technique) 1 Page - International Rectifier

Numéro de pièce IRF1404L
Description  Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A⑥)
Télécharger  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF1404L Datasheet(HTML) 1 Page - International Rectifier

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IRF1404S
IRF1404L
HEXFET® Power MOSFET
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
S
D
G
Absolute Maximum Ratings
Thermal Resistance
VDSS = 40V
RDS(on) = 0.004Ω
ID = 162A
†
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
5/18/01
www.irf.com
1
D2Pak
IRF1404S
TO-262
IRF1404L
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V‡
162
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V‡
115
†
A
IDM
Pulsed Drain Current
‡
650
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‡
519
mJ
IAR
Avalanche Current

95
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ‡
5.0
V/ns
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
-55 to +175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB mounted, steady-state)
*
–––
40
PD -93853C


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