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IRF1010EL Datasheet(Fiches technique) 2 Page - International Rectifier

Numéro de pièce IRF1010EL
Description  Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A⑦)
Télécharger  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF1010EL Datasheet(HTML) 2 Page - International Rectifier

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IRF1010ES/IRF1010EL
2
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
???
???
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
???
???
p-n junction diode.
VSD
Diode Forward Voltage
???
???
1.3
V
TJ = 25C, IS = 50A, VGS = 0V
trr
Reverse Recovery Time
???
73
110
ns
TJ = 25C, IF = 50A
Qrr
Reverse Recovery Charge
???
220
330
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
84
330
A
Notes:
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
???
???
VVGS = 0V, ID = 250A
?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient
???
0.064 ???
V/C
Reference to 25C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
???
???
12
m
?
VGS = 10V, ID = 50A
VGS(th)
Gate Threshold Voltage
2.0
???
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
69
???
???
SVDS = 25V, ID = 50A
???
???
25
A
VDS = 60V, VGS = 0V
???
???
250
VDS = 48V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage
???
???
100
VGS = 20V
Gate-to-Source Reverse Leakage
???
???
-100
nA
VGS = -20V
Qg
Total Gate Charge
???
???
130
ID = 50A
Qgs
Gate-to-Source Charge
???
???
28
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
???
???
44
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
???
12
???
VDD = 30V
tr
Rise Time
???
78
???
ID = 50A
td(off)
Turn-Off Delay Time
???
48
???
RG = 3.6?
tf
Fall Time
???
53
???
VGS = 10V, See Fig. 10
Between lead,
???
???
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
???
3210 ???
VGS = 0V
Coss
Output Capacitance
???
690
???
VDS = 25V
Crss
Reverse Transfer Capacitance
???
140
???
pF
? = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
??? 1180
320 mJ
IAS = 50A, L = 260H
nH
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
???
???
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25C, L = 260H
RG = 25?, IAS = 50A, VGS =10V
(See Figure 12)
ISD ? 50A, di/dt ? 230A/s, VDD ? V(BR)DSS,
TJ ? 175C
Pulse width ? 400s; duty cycle ? 2%.


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