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FP50N06L Fiches technique(PDF) 1 Page - Intersil Corporation

No de pièce FP50N06L
Description  50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
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Fabricant  INTERSIL [Intersil Corporation]
Site Internet  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FP50N06L Fiches technique(HTML) 1 Page - Intersil Corporation

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
50A, 60V, 0.022 Ohm, Logic Level
N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49164.
Features
• 50A, 60V
•rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06LE
TO-247
FG50N06L
RFP50N06LE
TO-220AB
FP50N06L
RF1S50N06LESM
TO-263AB
F50N06LE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S50N06LESM9A.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4072.3


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