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2N4400 Fiches technique(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No de pièce 2N4400
Description  NPN Plastic Encapsulated Transistor
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Fabricant  SECOS [SeCoS Halbleitertechnologie GmbH]
Site Internet  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2N4400 Fiches technique(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  2N4400_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH  
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2N4400
0.6 A, 60 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
29-Dec-2010 Rev. A
Page 1 of 1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

Base

Emitter
Collector

A
C
E
K
F
D
B
G
H
J
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
0.6
A
Collector Power Dissipation
PC
625
mW
Thermal resistance, junction to ambient
RθJA
200
°C / W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
V
IC= 0.1mA, IE = 0A
Collector to Emitter Breakdown Voltage
V(BR)CEO *
40
-
-
V
IC= 1mA, IB = 0A
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE= 0.1mA, IC = 0A
Collector Cut-Off Current
ICBO
-
-
0.1
μA
VCB= 60V, IE = 0 A
Emitter Cut-Off Current
IEBO
-
-
0.1
μA
VEB= 6V, IC =0 mA
DC Current Gain
hFE *
20
-
-
VCE= 1V, IC= 1mA
40
-
-
VCE= 1V, IC= 10mA
50
-
150
VCE= 1V, IC= 150mA
20
-
-
VCE= 2V, IC= 500mA
Collector to Emitter Saturation Voltage
VCE(sat) *
-
-
0.4
V
IC= 150mA, IB= 15mA
-
-
0.75
IC= 500mA, IB= 50mA
Base to Emitter Saturation Voltage
VBE(sat) *
0.75
-
0.95
V
IC= 150mA, IB=15mA
-
-
1.2
IC= 500mA, IB= 50mA
Collector output Capacitance
Cob
-
-
6.5
pF
VCB = 5V, IE = 0A, f=1MHz
Emitter input Capacitance
Cib
-
-
30
pF
VEB = 5V, IC = 0A, f=1MHz
Transition Frequency
fT *
200
-
-
MHz
VCE = 10V, IC = 20mA, f=100MHz
*Pulse test:Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%.
Emitter
Base
Collector
TO-92
REF.
Millimeter
Min.
Max.
A
4.40
4.70
B
4.30
4.70
C
12.70
-
D
3.30
3.81
E
0.36
0.56
F
0.36
0.51
G
1.27 TYP.
H
1.10
-
J
2.42
2.66
K
0.36
0.76


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