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2SC2859 Fiches technique(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No de pièce 2SC2859
Description  NPN Plastic-Encapsulate Transistor
Download  2 Pages
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Fabricant  SECOS [SeCoS Halbleitertechnologie GmbH]
Site Internet  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SC2859 Fiches technique(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  2SC2859_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH 2SC2859_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
2SC2859
0.5A , 35V
NPN Plastic-Encapsulate Transistor
22-Oct-2012 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

Base

Emitter
Collector

RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent hFE Linearity
Switching Applications
CLASSIFICATION OF hFE (1)
Product-Rank
2SC2859-O
2SC2859-Y
2SC2859-GR
Range
70~140
120~240
200~400
Marking
WO
WY
WG
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
35
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
5
V
Collector Current - Continuous
IC
500
mA
Collector Power Dissipation
PC
150
mW
Thermal Resistance From Junction To Ambient
RθJA
833
°C / W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V
IC=100μA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
30
-
-
V
IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V
IE=100μA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
μA
VCB=35V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
μA
VEB=5V, IC=0
hFE (1)
70
-
400
VCE=1V, IC=100mA
DC Current Gain
hFE (2)
25
-
-
VCE=6V, IC=400mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.25
V
IC=100mA, IB=10mA
Base to Emitter Voltage
VBE
-
-
1
V
VCE=1V, IC=100mA
Transition Frequency
fT
-
300
-
MHz
VCE=6V, IC=20mA
Collector Output Capacitance
Cob
-
7
-
pF
VCB=6V, IE=0, f=1MHz
SOT-23
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.80
3.04
G
0.09
0.18
B
2.10
2.55
H
0.45
0.60
C
1.20
1.40
J
0.08
0.177
D
0.89
1.15
K
0.6 REF.
E
1.78
2.04
L
0.89
1.02
F
0.30
0.50


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