SI2307DS-3 datasheet(3/4 Pages) KEXIN

No de pièce	SI2307DS-3

Description	P-Channel Enhancement MOSFET

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Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Site Internet	http://www.kexin.com.cn/index.asp

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MOSFET

P-Channel Enhancement MOSFET

SI2307DS (KI2307DS)

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Typical Characterisitics

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On-Resistance vs. Drain Current

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VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

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TC = –55 C

125 C

3 V

4 V

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Gate Charge

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 15 V

ID = 3 A

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

VGS = 10 V

ID = 3 A

TJ – Junction Temperature ( C)

VGS = 10 V

VGS = 4.5 V

25 C

VGS = 10 thru 5 V

。

Numéro de pièce similaire - SI2307DS-3

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SI2307DS-3 Fiches technique(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

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