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SI2303BDS-HF-3 Fiches technique(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2303BDS-HF-3 Fiches technique(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1.0 -3.0 V VGS=-10V, ID=-1.7A 200 VGS=-4.5V, ID=-1.3A 380 On state drain current *1 ID(ON) VGS=-10V, VDS ≤ -5V -6 A Forward Transconductance gFS VDS=-5V, ID=-1.7A 2.0 S Input Capacitance *2 Ciss 180 Output Capacitance *2 Coss 50 Reverse Transfer Capacitance *2 Crss 35 Total Gate Charge *2 Qg 4.3 10 Gate Source Charge *2 Qgs 0.8 Gate Drain Charge *2 Qgd 1.3 Turn-On DelayTime *3 td(on) 55 80 Turn-On Rise Time *3 tr 40 60 Turn-Off DelayTime *3 td(off) 10 20 Turn-Off Fall Time *3 tf 10 20 5 sec -0.75 Steady State -0.6 Diode Forward Voltage VSD IS=-0.75A,VGS=0V -0.85 -1.2 V Maximum Body-Diode Continuous Current IS A pF nC VGS=-4.5V, VDS=-15V, RL=15Ω,RGEN=6Ω ID=1.0A ns Zero Gate Voltage Drain Current IDSS μ A mΩ RDS(On) Static Drain-Source On-Resistance *1 VGS=0V, VDS=-15V, f=1MHz VGS=-10 V, VDS=-15V, ID=-1.7A *1 Pulse test: PW ≤ 300us duty cycle≤ 2%. *2 For DESIGN AID ONLY, not subject to production testing. *3 Switching time is essentially independent of operating temperature. ■ Marking Marking L3* F P-Channel MOSFET SI2303BDS-HF (KI2303BDS-HF) |
Numéro de pièce similaire - SI2303BDS-HF-3 |
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Description similaire - SI2303BDS-HF-3 |
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