SI2301BDS-HF-3 datasheet(1/5 Pages) KEXIN

No de pièce	SI2301BDS-HF-3

Description	P-Channel MOSFET

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Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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1

MOSFET

■

Features

●

VDS (V) =-20V

●

RDS(ON) ＜ 100mΩ (VGS =-4.5V)

●

RDS(ON) ＜ 150mΩ (VGS =-2.5V)

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current *1

Ta=25℃

-2.4

-2.2

Ta=70℃

-1.9

-1.8

Pulsed Drain Current *2

IDM

Power Dissipation

*1

Ta=25℃

0.9

0.7

W

Ta=70℃

0.57

0.45

Thermal Resistance.Junction- to-Ambient *1

120

145

*3

140

175

Junction Temperature

TJ

Storage Temperature Range

Tstg

PD

150

-55 to 150

RthJA

ID

-20

±

8

-10

V

A

℃

/W

*1 Surface Mounted on FR4 Board, t ≤ 5 sec.

*2 Pulse width limited by maximum junction temperature.

*3 Surface Mounted on FR4 Board.

G

S

D

2

3

1

●

Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

P-Channel MOSFET

SI2301BDS-HF (KI2301BDS-HF)

0.4 +0.1

-0.1

2.9 +0.2

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.2

1

2

3

Unit: mm

SOT-23-3

0.15 +0.02

-0.02

1. Gate

2. Source

3. Drain

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