IRFD1Z3 datasheet(3/6 Pages) INTERSIL

No de pièce	IRFD1Z3

Description	0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs

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Fabricant	INTERSIL [Intersil Corporation]

Site Internet	http://www.intersil.com/cda/home

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5-3

Internal Drain Inductance

LD

Measured From The

Drain Lead, 2mm

(0.08in) From Package

to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

4.0

-

nH

Internal Source Inductance

LS

Measured From The

Source Lead, 2mm

(0.08in) From Header to

Source Bonding Pad

-

6.0

-

nH

Thermal Resistance Junction to Ambient

RθJA

Free Air Operation

-

120

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

IRFD1Z0, IRFD1Z1

-

0.5

A

IRFD1Z2, IRFD1Z3

-

0.4

A

Pulse Source to Drain Current

ISDM

IRFD1Z0, IRFD1Z1

-

4.0

A

IRFD1Z2, IRFD1Z3

-

3.2

A

Source to Drain Diode Voltage (Note 2)

VSD

IRFD1Z0, IRFD1Z1

TA = 25

oC, I

SD = 0.5A, VGS = 0V

-

1.4

V

IRFD1Z2, IRFD1Z3

TA = 25

oC, I

SD = 0.4A, VGS = 0V

-

1.3

V

Reverse Recovery Time

trr

TJ = 150

oC, I

SD = 0.5A, dISD/dt = 100A/µs

-

100

-

ns

Reverse Recovery Charge

QRR

TJ = 150

oC, I

SD = 0.5A, dISD/dt = 100A/µs

-

0.2

-

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs

AMBIENT TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

LS

LD

G

D

S

G

D

S

TA, AMBIENT TEMPERATURE (

oC)

0.0

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

TA, AMBIENT TEMPERATURE (

oC)

50

75

100

25

150

0.4

0.2

0

0.1

125

0.3

IRFD1Z0, IRFD1Z1

IRFD1Z2, IRFD1Z3

0.5

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

Numéro de pièce similaire - IRFD1Z3

Fabricant	No de pièce	Fiches technique	Description
Intersil Corporation	IRFD110	52Kb / 6P	1A, 100V, 0.600 Ohm, N-Channel Power MOSFET
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