2SD1898_15 datasheet(1/2 Pages) SECOS

No de pièce	2SD1898

Description	Epitaxial Planar Transistor

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

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2SD1898

NPN Silicon

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

08-May-2007 Rev. A

Page 1 of 2

SOT-89

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Description

The 2SD1898 is designed for switching applications.

Absolute Maximum Ratings at Ta = 25 ::

::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

80

V

Emitter to Base Voltage

VEBO

5.0

V

IC

1

A

Collector Current

ICP (Single pulse Pw=20ms)

2

A

Total Power Dissipation

PD

500

mW

Characteristics at Ta = 25 ::

::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

100

-

V

IC=50uA

BVCEO

80

-

V

IC=1mA

BVEBO

5

-

V

IE=50uA

ICBO

-

1

uA

VCB=80V

IEBO

-

1

uA

VEB=4V

VCE(sat)

-

400

mV

IC=500mA, IB=20mA

hFE

82

-

390

VCE=3V, IC=500mA

fT

100

-

MHZ

VCE=10V,IC=50mA,f=100MHZ

Cob

-

25

-

pF

VCB=10V,IE=0, f=1MHz

Classification Of hFE

Rank

P

Q

R

hFE

82-180

120-270

180-390

Marking Code : DF

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