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IRF9630 Fiches technique(PDF) 2 Page - Intersil Corporation |
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IRF9630 Fiches technique(HTML) 2 Page - Intersil Corporation |
2 / 7 page 4-28 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF9630, RF1S9630SM UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D -6.5 -4 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -26 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 W Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 500 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V(Figure 10) -200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC= 125 oC - - -250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = -10V -6.5 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA On Resistance (Note 2) rDS(ON) ID = -3.5A, VGS = -10V (Figures 8, 9) - 0.500 0.800 Ω Forward Transconductance (Note 2) gfs VDS ≥ ID(ON) x rDS(ON)MAX, ID = -3.5A (Figure 12) 2.2 3.5 - S Turn-On Delay Time td(ON) VDD = -100V, ID ≈ -6.5A, RG = 50Ω RL = 15.4Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature -30 50 ns Rise Time tr - 50 100 ns Turn-Off Delay Time td(off) - 50 100 ns Fall Time tf -40 80 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature -31 45 nC Gate to Source Charge Qgs -18 - nC Gate to Drain (“Miller”) Charge Qgd -13 - nC Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) - 550 - pF Output Capacitance COSS - 170 - pF Reverse Transfer Capacitance CRSS -50 - pF Internal Drain Inductance LD Measured From the Contact Screw On Tab To the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 3.5 - nH Measured From the Drain Lead, 6mm (0.25in) From Package to the Center of Die - 4.5 - nH Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From Package to Source Bond- ing Pad - 7.5 - nH Thermal Resistance Junction to Case RθJC - - 1.67 oC/W Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 80 oC/W LS LD G D S IRF9630, RF1S9630SM |
Numéro de pièce similaire - IRF9630 |
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Description similaire - IRF9630 |
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