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IRF740 Fiches technique(PDF) 1 Page - Intersil Corporation |
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IRF740 Fiches technique(HTML) 1 Page - Intersil Corporation |
1 / 7 page 4-239 File Number 2311.3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF740 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17424. Features • 10A, 400V •rDS(ON) = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB TOP VIEW Ordering Information PART NUMBER PACKAGE BRAND IRF740 TO-220AB IRF740 NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN GATE DRAIN (FLANGE) Data Sheet July 1999 |
Numéro de pièce similaire - IRF740 |
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Description similaire - IRF740 |
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