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IRF740 Fiches technique(PDF) 1 Page - Intersil Corporation

No de pièce IRF740
Description  10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
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Fabricant  INTERSIL [Intersil Corporation]
Site Internet  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF740 Fiches technique(HTML) 1 Page - Intersil Corporation

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4-239
File Number
2311.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
IRF740
10A, 400V, 0.550 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17424.
Features
• 10A, 400V
•rDS(ON) = 0.550Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
TOP VIEW
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF740
TO-220AB
IRF740
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Data Sheet
July 1999


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