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FDN352AP Fiches technique(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDN352AP Fiches technique(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 4 page SMD Type www.kexin.com.cn 4 MOSFET . P-Channel MOSFET FDN352AP (KDN352AP) ■ Typical Characterisitics 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 Qg, GATE CHARGE (nC) I D = -0.9A V DS = -10V -20V -15V 0 50 100 150 200 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) C iss C oss C rss f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0 0 1 0 1 1 1 . 0 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms R DS(ON) LIMIT V GS = -10V SINGLE PULSE R JA = 270 oC/W TA = 25oC 10ms 1ms 100 µs 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE R JA = 270°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. θ θ Figure 11. Transient Thermal Response Curve. RθJA(t) = r(t) * RθJA RθJA = 270°C/W TJ – TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 P(pk) t 1 t2 |
Numéro de pièce similaire - FDN352AP |
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Description similaire - FDN352AP |
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