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FDN304P-3 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDN304P-3 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page SMD Type www.kexin.com.cn 1 MOSFET P-Channel MOSFET FDN304P (KDN304P) ■ Features ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) < 52mΩ (VGS =-4.5V) ● RDS(ON) < 70mΩ (VGS =-2.5V) ● RDS(ON) < 100mΩ (VGS =-1.8V) 1.Gate 2.Source 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 8 Continuous Drain Current (Note.1) ID -2.4 Pulsed Drain Current IDM -10 Power Dissipation (Note.1) 0.5 (Note.2) 0.46 Thermal Resistance.Junction- to-Ambient (Note.1) RthJA 250 Thermal Resistance.Junction- to-Case RthJC 75 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 PD W V ℃ /W A ℃ Note.1: 250°C/W when mounted on a 0.02 in pad of 2 oz. copper. Note.2: 270°C/W when mounted on a minimum pad. 2 D S G 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 |
Numéro de pièce similaire - FDN304P-3 |
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Description similaire - FDN304P-3 |
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