IRF240 datasheet(2/7 Pages) INTERSIL

No de pièce	IRF240

Description	18A, 200V, 0.180 Ohm, N-Channel Power MOSFET

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2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF240

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

200

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

200

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

18

A

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

11

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

72

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

125

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

580

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA (Figure 10)

200

-

V

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

-

4.0

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125

oC

-

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

18

-

A

Gate to Source Leakage

IGSS

VGS = ±20V

-

±100

nA

Drain to Source On Resistance

rDS(ON)

VGS = 10V, ID = 10A (Figures 8, 9)

-

0.14

0.180

Ω

Forward Transconductance (Note 2)

gfs

VDS = 10V, ID = 11V (Figure 12)

6.7

9.0

-

S

Turn-On Delay Time

tD(ON)

VDD = 100V, ID ≈ 18A, RG = 9.1Ω, RL = 5.3Ω

(Figures 17, 18) MOSFET Switching Times are

Essentially Independent of Operating Temperature

-16

30

ns

Rise Time

tr

-27

60

ns

Turn-Off Delay Time

tD(OFF)

-40

80

ns

Fall Time

tf

-31

60

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg

VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is

Essentially Independent of Operating Temperature

-43

60

nC

Gate to Source Charge

Qgs

-8

-

nC

Gate to Drain “Miller” Charge

Qgd

-27

-

nC

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

1275

-

pF

Output Capacitance

COSS

-

500

-

pF

Reverse-Transfer Capacitance

CRSS

-

160

-

pF

Internal Drain Inductance

LD

Measured between the

Contact Screw on Header

that is Closer to Source

and Gate Pins and Center

of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

5.0

-

nH

Internal Source Inductance

LS

Measured from the

Source Lead, 6mm

(0.25in) from Header to

Source Bonding Pad

-

12.5

-

nH

Thermal Resistance Junction to Case

RθJC

-

1.0

oC/W

Thermal Resistance Junction to Ambient

RθJA

Free Air Operation

-

30

oC/W

LS

LD

G

D

S

IRF240

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