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HUF76629D3 Fiches technique(PDF) 2 Page - Intersil Corporation

No de pièce HUF76629D3
Description  20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Download  9 Pages
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Fabricant  INTERSIL [Intersil Corporation]
Site Internet  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HUF76629D3 Fiches technique(HTML) 2 Page - Intersil Corporation

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Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 12)
100
-
-
V
ID = 250µA, VGS = 0V , TC = -40
oC (Figure 12)
90
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 95V, VGS = 0V
-
-
1
µA
VDS = 90V, VGS = 0V, TC = 150
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±16V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 11)
1
-
3
V
Drain to Source On Resistance
rDS(ON)
ID = 20A, VGS = 10V (Figures 9, 10)
-
0.0415
0.052
ID = 20A, VGS = 5V (Figure 9)
-
0.046
0.054
ID = 20A, VGS = 4.5V (Figure 9)
-
0.047
0.055
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
TO-251AA and TO-252AA
-
-
1.36
oC/W
Thermal Resistance Junction to
Ambient
RθJA
-
-
100
oC/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
VDD = 50V, ID = 20A
VGS = 4.5V, RGS = 6.8Ω
(Figures 15, 21, 22)
-
-
190
ns
Turn-On Delay Time
td(ON)
-11-
ns
Rise Time
tr
-
114
-
ns
Turn-Off Delay Time
td(OFF)
-38-
ns
Fall Time
tf
-60-
ns
Turn-Off Time
tOFF
-
-
145
ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 50V, ID = 20A
VGS = 10V,RGS = 8.2Ω
(Figures 16, 21, 22)
-
-
50
ns
Turn-On Delay Time
td(ON)
-
6.8
-
ns
Rise Time
tr
-28-
ns
Turn-Off Delay Time
td(OFF)
-67-
ns
Fall Time
tf
-60-
ns
Turn-Off Time
tOFF
-
-
190
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 10V
VDD = 50V,
ID = 20A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
-38
46
nC
Gate Charge at 5V
Qg(5)
VGS = 0V to 5V
-
21
25
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 1V
-
1.2
1.6
nC
Gate to Source Gate Charge
Qgs
-
3.3
-
nC
Gate to Drain "Miller" Charge
Qgd
-10-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
-
1285
-
pF
Output Capacitance
COSS
-
270
-
pF
Reverse Transfer Capacitance
CRSS
-65-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 20A
-
-
1.25
V
ISD = 10A
-
-
1.00
V
Reverse Recovery Time
trr
ISD = 20A, dISD/dt = 100A/µs
-
-
110
ns
Reverse Recovered Charge
QRR
ISD = 20A, dISD/dt = 100A/µs
-
-
370
nC
HUF76629D3, HUF76629D3S


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