2SJ181S_15 datasheet(3/4 Pages) KEXIN

No de pièce	2SJ181S

Description	P-Channel MOSFET

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Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Site Internet	http://www.kexin.com.cn/index.asp

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MOSFET

P-Channel MOSFET

2SJ181S

■

Typical Characterisitics

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

2

1

0.2

0.5

0.1

0.02

0.05

–0.05 –0.1 –0.2

–0.5 –1

–2

–5

V

= –20 V

Pulse Test

DS

Tc = –25 °C

75 °C

25 °C

Reverse Drain Current I

(A)

DR

Body–Drain Diode Reverse

Recovery Time

1000

200

500

100

20

50

10

–0.05 –0.1 –0.2

–0.5 –1

–2

–5

di / dt = 100 A / µs

V

= 0, Ta = 25 °C

GS

Drain Current I

(A)

D

Static Drain to Source on State Resistance

vs. Drain Current

500

200

100

20

50

10

5

–0.02 –0.05 –0.1 –0.2

–0.5

–1

–2

–15 V

V

= –10 V

GS

Pulse Test

40

32

24

16

8

–40

0

40

80

120

160

Case Temperature Tc (°C)

0

Static Drain to Source on State Resistance

vs. Temperature

GS

Pulse Test

V

= –10 V

–0.1 A

–0.2 A

D

I = –0.5 A

0

–200

–400

–600

–800

0

Gate Charge

Qg (nc)

0

–4

–8

–12

–16

–20

–1000

Dynamic Input Characteristics

4

8

12

16

20

DS

V

GS

V

I = –0.5 A

D

V

= –100 V

–250 V

–400 V

DD

V

= –100 V

–250 V

–400 V

DD

500

200

100

50

20

10

5

Drain Current I

(A)

D

Switching Characteristics

–0.05 –0.1 –0.2

–0.5 –1

–2

–5

t f

r

t

d(off)

t

d(on)

t

V

= –10 V, V

= –30 V

PW = 5 µs, duty < 1 %

GS

DD

Numéro de pièce similaire - 2SJ181S_15

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2SJ181S Fiches technique(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

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Numéro de pièce similaire - 2SJ181S_15

Description similaire - 2SJ181S_15

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