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FDN5630-3 Fiches technique(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce FDN5630-3
Description  N-Channel MOSFET
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

FDN5630-3 Fiches technique(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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2
MOSFET
N-Channel MOSFET
FDN5630 (KDN5630)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
60
V
Zero Gate Voltage Drain Current
IDSS
VDS=48V, VGS=0V
1
μ
A
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
(Note.1)
1
3
V
VGS=10V, ID=1.7A (Note.1)
100
VGS=10V, ID=1.7A TJ=125℃ (Note.1)
180
VGS=6V, ID=1.6A
(Note.1)
120
On State Drain Current
ID(ON)
VGS=10V, VDS=1.7V
(Note.1)
5
A
Forward Transconductance
gFS
VDS=10V, ID=1.7A
(Note.1)
6
S
Input Capacitance
Ciss
400
Output Capacitance
Coss
102
Reverse Transfer Capacitance
Crss
21
Total Gate Charge
Qg
7
10
Gate Source Charge
Qgs
1.6
Gate Drain Charge
Qgd
1.2
Turn-On DelayTime
td(on)
10
20
Turn-On Rise Time
tr
6
15
Turn-Off DelayTime
td(off)
15
28
Turn-Off Fall Time
tf
7
15
Maximum Body-Diode Continuous Current
IS
0.42
A
Diode Forward Voltage
VSD
IS=0.42A,VGS=0V (Note.1)
1.2
V
pF
nC
ns
VGS=10V, VDS=30V, ID=1A,RGEN=6Ω
RDS(On)
Static Drain-Source On-Resistance
VGS=0V, VDS=15V, f=1MHz
VGS=10V, VDS=20V, ID=1.7A
Note.1: Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
Marking
Marking
5630


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