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FDN5630 Fiches technique(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce FDN5630
Description  N-Channel MOSFET
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

FDN5630 Fiches technique(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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4
MOSFET
.
N-Channel MOSFET
FDN5630 (KDN5630)
Typical Characterisitics
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
R
(t) = r(t) * R
R
= 270 C/W
Duty Cycle, D = t /t
1 2
JA
JA
JA
T - T = P * R
(t)
JA
A
J
P(pk)
t1
t2
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0
4
8
12
16
20
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R JA=270
oC/W
TA=25
oC
0
2
4
6
8
10
0
2
4
6
8
Qg, GATE CHARGE (nC)
ID = 1.7A
VDS = 10V
20V
30V
0
100
200
300
400
500
600
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
0.01
0.1
1
10
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
10ms
1ms
100 s
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
R JA = 270oC/W
TA = 25oC


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