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MTB08N04J3 Fiches technique(PDF) 5 Page - Cystech Electonics Corp. |
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MTB08N04J3 Fiches technique(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C892J3 Issued Date : 2014.05.29 Revised Date : Page No. : 5/9 MTB08N04J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss NormalizedThreshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 Total Gate Charge---Qg(nC) VDS=20V ID=20A Maximum Safe Operating Area 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100μs 1s RDS(ON) Limited TC=25°C, Tj=150°, VGS=10V RθJC=2.5°C/W, Single Pulse Maximum Drain Current vs Case Temperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=2.5°C/W |
Numéro de pièce similaire - MTB08N04J3 |
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Description similaire - MTB08N04J3 |
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