MTBA6C12Q8-0-T3-G datasheet(7/12 Pages) CYSTEKEC

No de pièce	MTBA6C12Q8-0-T3-G

Description	N- AND P-Channel Logic Level Enhancement Mode MOSFET

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Fabricant	CYSTEKEC [Cystech Electonics Corp.]

Site Internet	http://www.cystekec.com

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7 / 12 page

CYStech Electronics Corp.

Spec. No. : C973Q8

Issued Date : 2014.09.23

Revised Date :

Page No. : 7/12

MTBA6C12Q8

CYStek Product Specification

Typical Characteristics : Q2( P-channel)

Typical Output Characteristics

0

2

4

6

8

01

23

4

5

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

-VDS, Drain-Source Voltage(V)

-10V

-9V

-8V

-7V

-6V

-5V

-4V

-3.5V

-3V

VGS=-2.5V

Static Drain-Source On-State resistance vs Drain Current

100

1000

0.01

0.1

1

10

100

-ID, Drain Current(A)

VGS=-4.5V

VGS=-3V

VGS=-10V

VGS=-2.5V

ID=-250μA,

V =0V

GS

Source Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

024

68

10

-IS, Source Drain Current(A)

VGS=0V

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

100

200

300

400

500

600

700

800

900

1000

02

46

8

1

-VGS, Gate-Source Voltage(V)

0

ID=-1.5A

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.8

1.2

1.6

2

2.4

-75 -50 -25

0

25 50

75 100 125 150 175 200

Tj, Junction Temperature(°C)

VGS=-10V, ID=-1.5A

RDS(ON)@Tj=25°C : 246mΩ typ.

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