Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

MTB090N06I3-0-UJ-G Fiches technique(PDF) 2 Page - Cystech Electonics Corp.

No de pièce MTB090N06I3-0-UJ-G
Description  N-Channel Enhancement Mode Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  CYSTEKEC [Cystech Electonics Corp.]
Site Internet  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB090N06I3-0-UJ-G Fiches technique(HTML) 2 Page - Cystech Electonics Corp.

  MTB090N06I3-0-UJ-G Datasheet HTML 1Page - Cystech Electonics Corp. MTB090N06I3-0-UJ-G Datasheet HTML 2Page - Cystech Electonics Corp. MTB090N06I3-0-UJ-G Datasheet HTML 3Page - Cystech Electonics Corp. MTB090N06I3-0-UJ-G Datasheet HTML 4Page - Cystech Electonics Corp. MTB090N06I3-0-UJ-G Datasheet HTML 5Page - Cystech Electonics Corp. MTB090N06I3-0-UJ-G Datasheet HTML 6Page - Cystech Electonics Corp. MTB090N06I3-0-UJ-G Datasheet HTML 7Page - Cystech Electonics Corp. MTB090N06I3-0-UJ-G Datasheet HTML 8Page - Cystech Electonics Corp.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
CYStech Electronics Corp.
Spec. No. : C420I3
Issued Date : 2014.07.11
Revised Date :
Page No. : 2/8
MTB090N06I3
CYStek Product Specification
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±
20
Continuous Drain Current @ VGS=10V, TC=25
C
(Note 1)
ID
15
A
Continuous Drain Current @ VGS=10V, TC=100
C
(Note 1)
11
Continuous Drain Current @ VGS=10V, TA=25
C
(Note 2)
5
Continuous Drain Current @ VGS=10V, TA=70
C
(Note 2)
4
Pulsed Drain Current
(Note 3)
IDM
30
Total Power Dissipation @TC=25℃
(Note 1)
PD
25
W
Total Power Dissipation @TC=100℃
(Note 1)
12.5
Total Power Dissipation @TA=25℃
(Note 2)
PDSM
2.5
Total Power Dissipation @TA=70℃
(Note 2)
1.6
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6
C/W
Thermal Resistance, Junction-to-ambient, max (Note 2)
RθJA
50
C/W
Thermal Resistance, Junction-to-ambient, max (Note 4)
RθJA
110
C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.


Numéro de pièce similaire - MTB090N06I3-0-UJ-G

FabricantNo de pièceFiches techniqueDescription
logo
SHENZHEN DOINGTER SEMIC...
MTB090N06I3 DOINGTER-MTB090N06I3 Datasheet
1Mb / 4P
   N-Channel MOSFET uses advanced trench technology
More results

Description similaire - MTB090N06I3-0-UJ-G

FabricantNo de pièceFiches techniqueDescription
logo
Microsemi Corporation
MSAFA75N10C MICROSEMI-MSAFA75N10C Datasheet
83Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
logo
GTM CORPORATION
GP9973 GTM-GP9973 Datasheet
335Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE20N03 GTM-GE20N03 Datasheet
296Kb / 5P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G2304A GTM-G2304A Datasheet
371Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G111K GTM-G111K Datasheet
366Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G138 GTM-G138 Datasheet
324Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G301K GTM-G301K Datasheet
296Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G2N7002K GTM-G2N7002K Datasheet
368Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE85T03 GTM-GE85T03 Datasheet
246Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE88L02 GTM-GE88L02 Datasheet
253Kb / 5P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE40N03 GTM-GE40N03 Datasheet
251Kb / 5P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com