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SI2324DS-HF-3 Fiches technique(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce SI2324DS-HF-3
Description  N-Channel MOSFET
Download  6 Pages
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2324DS-HF-3 Fiches technique(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
100
V
VDS=100V, VGS=0V
1
VDS=100V, VGS=0V, TJ=55℃
10
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
1.2
2.8
V
VGS=10V, ID=1.5A
234
VGS=6V, ID=1A
267
VGS=4.5V, ID=0.5A
278
On State Drain Current
ID(ON)
VGS=4.5V, VDS≥5V
5
A
Forward Transconductance
gFS
VDS=20V, ID=1.5A
2
S
Input Capacitance
Ciss
190
Output Capacitance
Coss
22
Reverse Transfer Capacitance
Crss
13
Gate Resistance
Rg
VGS=0V, VDS=0V, f=1MHz
0.3
1.4
2.8
Ω
Total Gate Charge
Qg
5.2
10.4
Gate Source Charge
Qgs
0.75
Gate Drain Charge
Qgd
1.4
Turn-On DelayTime
td(on)
30
45
Turn-On Rise Time
tr
26
39
Turn-Off DelayTime
td(off)
17
26
Turn-Off Fall Time
tf
12
20
Body Diode Reverse Recovery Time
trr
IF= 1.3A, dI/dt= 100A/μs
22
33
Body Diode Reverse Recovery Charge
Qrr
IF= 1.3A, dI/dt= 100A/μs
21
32
nC
Maximum Body-Diode Continuous Current
IS
2.1
A
Diode Forward Voltage
VSD
IS=1.3A,VGS=0V
0.8
1.2
V
pF
nC
ns
Zero Gate Voltage Drain Current
IDSS
μ
A
VGS=4.5V, VDS=50V, RL=39Ω,RGEN=1Ω
RDS(On)
Static Drain-Source On-Resistance
VGS=0V, VDS=50V, f=1MHz
VGS=4.5V, VDS=50V, ID=1.6A
2
SMD
Type
IC
SMD Type
MOSFET
Marking
Marking
D4* F
a.Pulse test ; pulse width ≤300 μs,duty cycle≤2%
a
a
a
N-Channel MOSFET
SI2324DS-HF (KI2324DS-HF)
www.kexin.com.cn


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