PRELIMINARY DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14679EJ2V0DS00 (2nd edition)

Date Published April 2000 NS CP(K)

Printed in Japan

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

©

1999, 2000

The mark

•

•

•

• shows major revised points.

FEATURES

• Flat-lead 6-pin thin-type ultra super minimold package

• 2 different built-in transistors (2SC5603, 2SC5600)

• Low voltage operation

Q1: Built-in high gain transistor

Q2: Built-in low phase distortion transistor suited for OSC operation

BUILT-IN TRANSISTORS

Q1

Q2

3-pin thin-type ultra super minimold part No.

2SC5603

2SC5600

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA843TC

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA843TC-T1

3 kpcs/reel

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

Because this product uses high-frequency technology, avoid excessive static electricity, etc.