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CA3096AM96 Fiches technique(PDF) 2 Page - Intersil Corporation |
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CA3096AM96 Fiches technique(HTML) 2 Page - Intersil Corporation |
2 / 14 page 2 Absolute Maximum Ratings Operating Conditions NPN PNP Collector-to-Emitter Voltage, VCEO CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 35V -40V CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V -24V Collector-to-Base Voltage, VCBO CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V -40V CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V -24V Collector-to-Substrate Voltage, VCIO (Note 1) CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V - CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V - Emitter-to-Substrate Voltage, VEIO CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . - -40V CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - -24V Emitter-to-Base Voltage, VEBO CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . 6V -40V CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V -24V Collector Current, IC (All Types) . . . . . . . . . . . . 50mA -10mA Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .-55oC to 125oC Thermal Information Thermal Resistance (Typical, Note 2) θ JA ( oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 Maximum Power Dissipation (Each Transistor, Note 3) . . . . . 200mW Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3096 is isolated from the substrate by an integral diode. The substrate (Terminal 16) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θJA is measured with the component mounted on an evaluation PC board in free air. 3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal resistances to calculate the junction temperature. Electrical Specifications For Equipment Design, At TA = 25 oC PARAMETER TEST CONDITIONS CA3096 CA3096A CA3096C UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX DC CHARACTERISTICS FOR EACH NPN TRANSISTOR ICBO VCB = 10V, IE = 0 - 0.001 100 - 0.001 40 - 0.001 100 nA ICEO VCE = 10V, IB = 0 - 0.006 1000 - 0.006 100 - 0.006 1000 nA V(BR)CEO IC = 1mA, IB = 0 35 50 - 35 50 - 24 35 - V V(BR)CBO IC = 10µA, IE = 0 45 100 - 45 100 - 30 80 - V V(BR)CIO ICI = 10µA, IB = IE = 0 45 100 - 45 100 - 30 80 - V V(BR)EBO IE = 10µA, IC = 0 68 - 6 8 - 68 - V VZ IZ = 10µA 6 7.9 9.8 6 7.9 9.8 6 7.9 9.8 V VCE SAT lC = 10mA, IB = 1mA - 0.24 0.7 - 0.24 0.5 - 0.24 0.7 V VBE (Note 4) IC = 1mA, VCE = 5V 0.6 0.69 0.78 0.6 0.69 0.78 0.6 0.69 0.78 V hFE (Note 4) 150 390 500 150 390 500 100 390 670 | ∆VBE/∆T| (Note 4) IC = 1mA, VCE = 5V - 1.9 - - 1.9 - - 1.9 - mV/oC DC CHARACTERISTICS FOR EACH PNP TRANSISTOR ICBO VCB = -10V, IE = 0 - -0.06 -100 - -0.006 -40 - -0.06 -100 nA CA3096, CA3096A, CA3096C |
Numéro de pièce similaire - CA3096AM96 |
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Description similaire - CA3096AM96 |
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