Semiconductor

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

BUZ73A

5.8A, 200V, 0.600 Ohm, N-Channel Power

MOSFET

This is an N-Channel enhancement mode silicon gate power

field effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Formerly developmental type TA4600.

Features

• 5.8A, 200V

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

BUZ73A

TO-220AB

BUZ73A

NOTE: When ordering, use the entire part number.

G

D

S

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

Data Sheet

October 1998

File Number

2263.1

[ /Title

(BUZ73

A)

/Subject

(5.8A,

200V,

0.600

Ohm, N-

Channel

Power

MOS-

FET)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FET,

TO-

220AB)

/Creator

()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/UseOut-

lines

/DOC-

VIEW