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IRLR014NTRPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRLR014NTRPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 10 page IRLR014NPbF IRLU014NPbF HEXFET® Power MOSFET S D G Parameter Typ. Max. Units RθJC Junction-to-Case ––– 5.3 RθJA Case-to-Ambient (PCB mount)** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance VDSS = 55V RDS(on) = 0.14Ω ID = 10A Description 10/01/10 www.irf.com 1 l Logic-Level Gate Drive l Surface Mount (IRLR024N) l Straight Lead (IRLU024N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.1 A IDM Pulsed Drain Current 40 PD @TC = 25°C Power Dissipation 28 W Linear Derating Factor 0.2 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 35 mJ IAR Avalanche Current 6.0 A EAR Repetitive Avalanche Energy 2.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings D-Pak IRLR014NPbF I-Pak IRLU014NPbF PD - 95551B |
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