 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
IRLL2703TRPBF Fiches technique(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRLL2703TRPBF Fiches technique(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRLL2703PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.045 VGS = 10V, ID = 3.9A ––– ––– 0.060 Ω VGS = 5.0V, ID = 3.1A ––– ––– 0.070 VGS = 4.0V, ID = 2.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.4 V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.9 ––– ––– S VDS = 25V, ID = 2.3 A ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– 9.3 14 ID = 2.3A Qgs Gate-to-Source Charge ––– 2.3 3.4 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 5.1 7.6 VGS = 5.0V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 7.4 ––– VDD = 15V tr Rise Time ––– 24 ––– ns ID = 2.3A td(off) Turn-Off Delay Time ––– 6.9 ––– RG = 6.2 Ω tf Fall Time ––– 14 ––– RD = 6.5 Ω, See Fig. 10 Ciss Input Capacitance ––– 530 ––– VGS = 0V Coss Output Capacitance ––– 230 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 95 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.3A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 24 mH RG = 25Ω, IAS = 3.9A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.3A, VGS = 0V trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = 2.3A Qrr Reverse RecoveryCharge ––– 62 94 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 16 3.9 A |
Numéro de pièce similaire - IRLL2703TRPBF |
|
Description similaire - IRLL2703TRPBF |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
