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UPA1856 Fiches technique(PDF) 1 Page - NEC

No de pièce UPA1856
Description  P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Fabricant  NEC [NEC]
Site Internet  http://www.nec.com/
Logo NEC - NEC

UPA1856 Fiches technique(HTML) 1 Page - NEC

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
1998, 1999
MOS FIELD EFFECT TRANSISTOR
µµµµPA1856
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D13808EJ2V0DS00 (2nd edition)
Date Published
March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The
µPA1856 is a switching device which can be
driven directly by a 2.5-V power source.
The
µPA1856 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 45 m
Ω MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 48 m
Ω MAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 72 m
Ω MAX. (VGS = –2.7 V, ID = –2.5 A)
RDS(on)4 = 77 m
Ω MAX. (VGS = –2.5 V, ID = –2.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1856GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–20
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID(DC)
±4.5
A
Drain Current (pulse)
Note1
ID(pulse)
±18
A
Total Power Dissipation
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm
2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
14
85
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.1
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
–0.08
0.25
0.5
3
°+5°
–3
°
0.6
+0.15
–0.1
1.2 MAX.
0.1±0.05
1.0±0.05
1
:Drain1
2, 3 :Source1
4
:Gate1
5
:Gate2
6, 7 :Source2
8
:Drain2
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
The mark
• shows major revised points.


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