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FDN537N Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN537N
Description  Single N-Channel Power Trench MOSFET
Download  6 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN537N Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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©2013 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FDN537N Rev.C2
Electrical Characteristics T
J = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
18
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA1.2
1.8
3.0
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 6.5 A
19
23
m
Ω
VGS = 4.5 V, ID = 6.0 A
25
36
VGS = 10 V, ID = 6.5 A, TJ = 125 °C
25
30
gFS
Forward Transconductance
VDD = 5 V, ID = 6.5 A
24
S
Ciss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
360
465
pF
Coss
Output Capacitance
143
180
pF
Crss
Reverse Transfer Capacitance
22
35
pF
Rg
Gate Resistance
1.0
Ω
td(on)
Turn-On Delay Time
VDD = 15 V, ID = 6.5 A,
VGS = 10 V, RGEN = 6 Ω
510
ns
tr
Rise Time
110
ns
td(off)
Turn-Off Delay Time
11
19
ns
tf
Fall Time
110
ns
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
VDD = 15 V
ID = 6.5 A
6.0
8.4
nC
Total Gate Charge
VGS = 0 V to 4.5 V
3.0
4.2
nC
Qgs
Total Gate Charge
1.2
nC
Qgd
Gate to Drain “Miller” Charge
1.1
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 6.5 A
(Note 2)
0.86
1.2
V
trr
Reverse Recovery Time
IF = 6.5 A, di/dt = 100 A/μs
14
22
ns
Qrr
Reverse Recovery Charge
3
10
nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
80 °C/W when mounted on a
1 in2 pad of 2 oz copper
a)
180 °C/W when mounted on a
minimum pad.
b)


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